The ACPL-337J is an advanced highly integrated gate drive optocoupler, designed to ISOLATE, DRIVE, PROTECT and FEEDBACK the IGBT’s operational status. It has a rail-to-rail output that can deliver 4A ...
The FOD8332 is an advanced 2.5 A output current IGBT drive optocoupler capable of driving medium power IGBTs with ratings up to 1,200 V and 150 A. It is suited for fast-switching driving of power ...
The insulated gate bipolar transistor (IGBT) has been around for about 30 years as a commercially available product, and has been through several generations of successively improved performance and ...
Local power that is available for protection circuits, such as desaturation detection. Among the disadvantages of this type of driver are the cost, complexity and board space required for all the ...
Fairchild Semiconductor's Smart Gate Driver Optocoupler Enables Simpler Design and Increased Reliabi
SAN JOSE, Calif.--(BUSINESS WIRE)-- For today's high-power industrial applications, designers have traditionally used discrete components for the IGBT drivers, resulting in higher overall design ...
For the PDF version of this article, click here. Proper gate drive is critical to the performance and reliability of insulated gate bipolar transistor (IGBT) modules. The gate driver must produce high ...
UK power firm Amantys Power Electronics has developed its next generation IGBT gate drive technology which is being demonstrated this week at the PCIM exhibition in Nuremberg. Called NG Gate Drive, it ...
NEWARK, DE / ACCESSWIRE / November 15, 2022 / The global Insulated Gate Bipolar Transistor (IGBT) market stands at US$ 7.7 Bn as of now and is expected to reach US$ 12.5 Bn by the year 2032 at a ...
Rutronik has announced the first intelligent integrated insulated gate bipolar transistor (igbt) drive optocoupler with integrated igbt protection. The PS9402 comprises a gallium aluminum arsenide ...
The PS9402 comprises a gallium aluminium arsenide (GaAIAs) led as the light emitting element and a light receiving IC. The device is designed to drive IGBTs (integrated insulated gate bipolar ...
It has been assumed that we are approaching the performance limits of silicon-based power electronics. Researchers have now challenged this belief by developing a miniaturized silicon insulated gate ...
SANTA CLARA, Calif.--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the development of the R2A25110KSP ...
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