Gate-All-Around Field Effect Transistors (GAA FETs) represent a promising advancement in semiconductor technology offering improved electrostatic control and reduced short-channel effects (SCEs) ...
In this paper, we report a tunnel field-effect transistor (TFET) based on a zigzag antimonene nanoribbon (ZSbNR) with a 12 nm channel length, simulated using density functional theory (DFT). This ...
The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
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