Optical inspection cannot resolve critical defects at advanced nodes and cannot detect subsurface defects. Especially at 7nm and below, many yield and reliability killer defects are the result of ...
Electron-beam inspection is proving to be indispensable for finding critical defects at sub-5nm dimensions. The challenge now is how to speed up the process to make it economically palatable to fabs.
SANTA CLARA, Calif., Dec. 14, 2022 (GLOBE NEWSWIRE) -- Applied Materials, Inc. today announced the commercial availability of “cold field emission” (CFE) technology, a breakthough in eBeam imaging ...
If anyone still doubts that the electron beam has come of age for wafer inspection, all they need to do is look at Applied Materials Inc.'s recent acquisition. Applied Materials is taking over ...
SAN JOSE, Calif. — Looking to address the soaring costs of photomasks at the 45-nm node and beyond, a Japanese R&D organization is proposing and putting the pieces together to form a ...
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