Microchip's Kevin Speer explains why silicon carbide makes solid-state transformers practical for AI data center power.
The 2U instrument combines two independent channels with ultra-low phase and amplitude modulation noise and calibrated output ...
The ALATTIS program targets a domestic manufacturing process for 10kV SiC IGBTs and PiN diodes for high-power applications.
Infineon's PSOC C3 Performance Line adds a PPCA accelerator enabling switching frequencies up to 2 MHz for GaN-based power ...
The DF150 operates from -46°C to +60°C and combines 91% efficiency with IP67 protection for demanding power applications.
The collaboration combines digital control with GaN and SiC technologies to address efficiency and power-density requirements ...
Solid-state circuit breakers (SSCBs) have many advantages over mechanical breakers. While silicon carbide (SiC)-based SSCBs ...
From HVDC converters to solid-state transformers, advanced power electronics are driving T&D grid modernization.
AI data centers and electrification are transforming the traditional power grid into a decentralized, multi-directional ecosystem. Although traditional data centers have been around for decades, it is ...
The new devices combine low RDS(ON), high drain current and wettable flanks for compact, high-density automotive power designs. Taiwan Semiconductor Corporation (TSC) has expanded its TQM Series of ...
The expanded series offers capacitance up to 2060µF, ripple currents up to 5.39A and a service life of 5,000 hours at 105°C.
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